Simulations of Statistical Variability in <i>n</i>-Type FinFET, Nanowire, and Nanosheet FETs

Four sources of variability, metal grain granularity (MGG), line-edge roughness (LER), gate-edge (GER), and random discrete dopants (RDD), affecting the performance state-of-the-art FinFET, nanosheet (NS), nanowire (NW) FETs, are analysed via our in-house 3D finite-element drift-diffusion/Monte Carlo simulator that includes 2D Schrödinger equation quantum corrections. The MGG LER variability influence device three multi-gate architectures most. FinFET NS FET similarly affected by variations with threshold voltage on-current standard deviations significantly lower (at least 20 %) than those NW FET. has a negligible in $\sigma ~{V}_{T}$ values around 12 42 times equally RDD ( {V}_{T}$ = 8 mV) minimally influenced GER {V}_{T} \approx 4$ mV). FETs makes them strong candidates to replace FinFETs.